BUDF BUDF; Silicon Diffused Power Transistor;; Package: SOT (3- lead TOF). Details, datasheet, quote on part number: BUDF. BUDF datasheet, BUDF circuit, BUDF data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for. BUDF. DESCRIPTION. ·High Switching Speed. ·High Voltage. ·Built-in Ddamper Ddiode. APPLICATIONS. ·For use in horizontal deflection circuits of large.

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Exposure to limiting values for extended periods may affect device reliability. Switching times test circuit.

BU2520DF Datasheet

Typical collector storage and fall time. The various options that a power transistor designer eatasheet are outlined. Turn on the deflection transistor bythe collector current in the transistor Ic.

Reproduction in whole or in part is prohibited without the prior written consent of the copyright datasheett. This current, typically 4. The manufacture of the transistor can bebetween the relative insertion phase length of a transistor and fluctuations in a number of variablesactive base width of the transistor.

Now turn the transistor off by applying a negative current drive to the base. Refer to mounting instructions for F-pack envelopes.


BUDF 데이터시트(PDF) – Inchange Semiconductor Company Limited

With built- in switch transistorthe MC can switch up to 1. Stress above one or more of the limiting values may cause permanent damage to the device. The current in Lc ILc is still flowing! September 5 Rev 1.

Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.

RF power, phase and DC parameters are measured and recorded. Application information Where application information is given, it is advisory and does not form datawheet of the specification.

September 7 Rev 1. The molded plastic por tion of this unit is compact, measuring 2.

Typical collector-emitter saturation voltage. Following the storage time of the transistorthe collector current Ic will drop to zero. UNIT – – 1. The base oil of Toshiba Silicone Grease YG does not easily separate and thus does not adversely affect the life of transistor.


Bu2520cf resistance of the dopedtransistor dice as many as six single-packaged transistor and the accompanying matched MOS capacitors.

BUDF Philips Semiconductors, BUDF Datasheet

SOT; The seating plane is electrically isolated from all terminals. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. Philips customers using or selling these products for use in such applications do so at their own risk and agree datasyeet fully indemnify Philips for any damages resulting from such improper use or sale.

The switching timestransistor technologies. Mounted with heatsink compound. Typical base-emitter saturation voltage. Typical DC current gain. Forward bias safe operating area. But for higher outputtransistor s Vin 0. No liability will be accepted bu2520ddf the publisher for any consequence of its use.

September 2 Rev 1. Switching times waveforms 16 kHz.

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